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Design and Integration of an O-band Silicon Nitride AWG for CWDM Applications

Abstract : Experimental demonstration of an O-band four channel CWDM silicon nitride AWG is reported. Specificity of low order array has been explored through multiple devices among which insertion loss below 2.3dB, crosstalk level as high as 37dB and polarization insensitive spectral response flattening is obtained.
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https://hal.archives-ouvertes.fr/hal-02927097
Contributor : Sylvain Guerber <>
Submitted on : Wednesday, September 2, 2020 - 3:42:51 PM
Last modification on : Monday, December 7, 2020 - 10:02:39 AM
Long-term archiving on: : Wednesday, December 2, 2020 - 1:45:25 PM

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Sylvain Guerber, Carlos Alonso-Ramos, Diego Perez-Galacho, Xavier Leroux, Nathalie Vulliet, et al.. Design and Integration of an O-band Silicon Nitride AWG for CWDM Applications. IEEE 14th International Conference on Group IV Photonics (GFP 2017), Aug 2017, Berlin, Germany. ⟨10.1109/GROUP4.2017.8082232⟩. ⟨hal-02927097⟩

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