Design and Integration of an O-band Silicon Nitride AWG for CWDM Applications - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2018

Design and Integration of an O-band Silicon Nitride AWG for CWDM Applications

Résumé

Experimental demonstration of an O-band four channel CWDM silicon nitride AWG is reported. Specificity of low order array has been explored through multiple devices among which insertion loss below 2.3dB, crosstalk level as high as 37dB and polarization insensitive spectral response flattening is obtained.
Fichier principal
Vignette du fichier
Design and Integration of an O-band Silicon Nitride AWG for CWDM Applications (1).pdf (439.22 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02927097 , version 1 (02-09-2020)

Identifiants

Citer

Sylvain Guerber, Carlos Alonso-Ramos, Diego Perez-Galacho, Xavier Leroux, Nathalie Vulliet, et al.. Design and Integration of an O-band Silicon Nitride AWG for CWDM Applications. IEEE 14th International Conference on Group IV Photonics (GFP 2017), Aug 2017, Berlin, Germany. ⟨10.1109/GROUP4.2017.8082232⟩. ⟨hal-02927097⟩
38 Consultations
345 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More