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Design and Integration of an O-band Silicon Nitride AWG for CWDM Applications
Abstract : Experimental demonstration of an O-band four channel CWDM silicon nitride AWG is reported. Specificity of low order array has been explored through multiple devices among which insertion loss below 2.3dB, crosstalk level as high as 37dB and polarization insensitive spectral response flattening is obtained.
Cited literature [7 references]
https://hal.archives-ouvertes.fr/hal-02927097
Contributor : Sylvain Guerber Connect in order to contact the contributor
Submitted on : Wednesday, September 2, 2020 - 3:42:51 PM
Last modification on : Sunday, June 26, 2022 - 12:16:48 PM
Long-term archiving on: : Wednesday, December 2, 2020 - 1:45:25 PM
Contributor : Sylvain Guerber Connect in order to contact the contributor
Submitted on : Wednesday, September 2, 2020 - 3:42:51 PM
Last modification on : Sunday, June 26, 2022 - 12:16:48 PM
Long-term archiving on: : Wednesday, December 2, 2020 - 1:45:25 PM
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Design and Integration of an O...
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