Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy

Qiushi Huang (1) , Qi Jia (2) , Jiangtao Feng (1) , Hao Huang (3) , Xiaowei Yang (1) , Joerg Grenzer (4) , Kai Huang (3) , Shibing Zhang (3) , Jiajie Lin (3) , Hongyan Zhou (3) , Tiangui You (3) , Wenjie Yu (3) , Stefan Facsko (4) , Philippe Jonnard (5) , Meiyi Wu (6) , Angelo Giglia (7) , Zhong Zhang (1) , Zhi Liu (3) , Zhanshan Wang (1) , Xi Wang (3) , Xin Ou (3)

1 Institute of Precision Optical Engineering, Department of Physics
2 UCAS - University of Chinese Academy of Sciences [Beijing]
3 Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
4 Institut für Ionenstrahlphysik und Materialforschung
5 LCPMR - Laboratoire de Chimie Physique - Matière et Rayonnement
6 LCPMR - Laboratoire de Chimie Physique - Matière et Rayonnement
7 TASC - Laboratorio Nazionale TASC

Domaines: Autre [cond-mat.other]

Qiushi Huang, Qi Jia, Jiangtao Feng, Hao Huang, Xiaowei Yang, et al.. Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy. Nature Communications, 2019, 10 (1), ⟨10.1038/s41467-019-10095-2⟩. ⟨hal-02923371⟩