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Nano-electromanipulation of Spin Crossover Nanorods: Towards Switchable Nanoelectronic Devices

Abstract : The nanoscale manipulation and charge transport properties of the [Fe(Htrz)2(trz)](BF4) spin‐crossover compound is demonstrated. Such 1D spin‐crossover nanostructures are attractive building blocks for nanoelectronic switching and memory devices.
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https://hal.archives-ouvertes.fr/hal-02908542
Contributor : Marie-Hélène Gulli Connect in order to contact the contributor
Submitted on : Wednesday, July 29, 2020 - 11:30:36 AM
Last modification on : Thursday, December 2, 2021 - 2:10:04 PM

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Aurelian Rotaru, Julien Dugay, Reasmey Phary Tan, Il’ya Gural'Skiy, Lionel Salmon, et al.. Nano-electromanipulation of Spin Crossover Nanorods: Towards Switchable Nanoelectronic Devices. Advanced Materials, Wiley-VCH Verlag, 2013, 25 (12), pp.1745-1749. ⟨10.1002/adma.201203020⟩. ⟨hal-02908542⟩

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