Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements

C. Kriso , F. Triozon (1) , C. Delerue (2, 3) , L. Schneider , F. Abbate (4) , E. Nolot (1) , D. Rideau (4) , Y.-M. Niquet (5) , G. Mugny (4) , C. Tavernier (6)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 PHYSIQUE - IEMN - Physique - IEMN
4 ST-CROLLES - STMicroelectronics [Crolles]
5 LSIM - Laboratory of Atomistic Simulation
6 STMicroelectronics

Domaines: Physique [physics]; Matière Condensée [cond-mat]

C. Kriso, F. Triozon, C. Delerue, L. Schneider, F. Abbate, et al.. Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements. Solid-State Electronics, 2017, 129, pp.93-96. ⟨10.1016/j.sse.2016.12.011⟩. ⟨hal-02906816⟩