Enhanced Wide-band Infrared Absorptivity of Black Silicon

Sreyash Sarkar (1) , Ahmed A Elsayed (1) , Frédéric Marty (1) , Jérémie Drevillon (2) , Yasser M Sabry (3) , Jiancun Zhao (4) , Yiting Yu (4) , Elodie Richalot (1) , Philippe Basset (1) , Tarik Bourouina (1) , E. Nefzaoui (5, 1)

1 ESYCOM - Electronique, Systèmes de communication et Microsystèmes
2 TNR - Thermique aux Nano échelles et Rayonnement [Institut Pprime]
3 Université Ain Shams
4 NPU - Northwestern Polytechnical University [Xi'an]
5 ESIEE Paris

In the present work, we report, on the exceptionally high absorptivity of Black Silicon (BSi) in the spectral range of thermal radiation, which can be instrumental for various thermal radiation related applications. Having fabricated two wafers of BSi having n-type low and high doping, we have found experimentally that for highly doped BSi, a high absorptivity is observed till 15 µm which has also been compared with similarly doped Flat Si (FSi) samples. However, beyond 15 µm, the absorptivity of highly doped BSi sample decreases. Subsequent processing of SEM images reveals that these noteworthy radiative properties can probably be attributed to particular morphological features of heavily doped BSi at the nanoscale. These features are quantified through statistical image processing. Reported results pave the way to highly integrated and effective infrared sources using Black Silicon.

Mots clés: absorptivity; black silicon; radiative infrared properties; doping

Domaines: Micro et nanotechnologies/Microélectronique; Instrumentations et Détecteurs [physics.ins-det]; Optique / photonique; Thermique [physics.class-ph]

Sreyash Sarkar, Ahmed A Elsayed, Frédéric Marty, Jérémie Drevillon, Yasser M Sabry, et al.. Enhanced Wide-band Infrared Absorptivity of Black Silicon. Congrès Annuel de la Société Française de Thermique 2020, Jun 2020, Belfort, France. ⟨10.25855/SFT2020-067⟩. ⟨hal-02902598⟩