Design of A Multistage Marx Generator topology based on SiC-MOSFET Device for Atomic Probe Tomography Applications

Kambiz Tehrani (1) , Yunbi Liu (1) , Loïc Rousseau (2, 1) , Antoine Normand (2) , François Vurpillot (2)

1 ESIGELEC - École Supérieure d’Ingénieurs en Génie Électrique
2 GPM - Groupe de physique des matériaux

This paper develops a design of high-voltage conversion chain using SiC-MOSFET devices. We have realized a power circuit model which is divided in three parts, a rectifier (AC/DC) then a DC/DC Boost based on SiC-Mosfet and finally a Multistage Marx Generator based on SiC-Mosfet. This structure is intended for high voltage (1.2 KV) and high frequency (100 KHz) applications. In this proposal, a Proportional Integrator Controller is used to control the output voltage of DC/DC Boost converter and to provide a stable voltage for Multistage Marx generator. The originality of this proposal lies in the use of the Multistage Marx generator based on SiC Mosfet devices in the atomic probe tomography applications. We have validated this power circuit model with simulation results on MATLAB and SABER Software.

Mots clés: SiC-MOSFET Switch; Marx generator; Pulse Generator; Modeling; PI controller; Atom Probe Tomogrpahy

Domaines: Sciences de l'ingénieur [physics]; Electronique; Physique [physics]

Kambiz Tehrani, Yunbi Liu, Loïc Rousseau, Antoine Normand, François Vurpillot. Design of A Multistage Marx Generator topology based on SiC-MOSFET Device for Atomic Probe Tomography Applications. 2020 IEEE 15th International Conference of System of Systems Engineering (SoSE), Jun 2020, Budapest, France. pp.000423-000428, ⟨10.1109/SoSE50414.2020.9130521⟩. ⟨hal-02889711⟩