Transport properties of Ti-Ni-Zr films grown by pulsed laser deposition

Olivier Boffoué (1) , Bertrand Lenoir (1) , Alexandre Jacquot (1) , Valerie Brien (2) , Christine Bellouard (1) , Anne Dauscher (1)

1 LPM - Laboratoire de physique des matériaux
2 LSG2M - Laboratoire de Science et Génie des Matériaux et de Métallurgie

Quasicrystalline Ti41.5Ni17Zr41.5 thin films have been synthesized at different temperatures by pulsed laser deposition (PLD) from a Nd:YAG laser. Electrical resistivity, Hall coefficient, magnetoresistance and thermopower measurements have been conducted in the 4.4–300 K or 70–300 K temperature range. Ti41.5Ni17Zr41.5 quasicrystals are characterized by a high electrical conductivity, an order of magnitude higher than in other quasicrystals, independent of their morphology and microstructure. Hall measurements indicate that the films have a high carrier concentration. Thermoelectric powers in Ti41.5Ni17Zr41.5 have relatively small magnitudes and the values have been found to depend on the microstructure.

Mots clés: Thin Films; Transport Properties; Quasicrystals

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Olivier Boffoué, Bertrand Lenoir, Alexandre Jacquot, Valerie Brien, Christine Bellouard, et al.. Transport properties of Ti-Ni-Zr films grown by pulsed laser deposition. Solid State Communications, 2004, 132 (3-4), pp.209-212. ⟨10.1016/j.ssc.2004.07.037⟩. ⟨hal-02882474⟩