Nucleation and Chemical Transformation of RuO 2 Films Grown on (100) Si Substrates by Atomic Layer Deposition - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Chemical Vapor Deposition Année : 2011

Nucleation and Chemical Transformation of RuO 2 Films Grown on (100) Si Substrates by Atomic Layer Deposition

Amelie Salaun
  • Fonction : Auteur
Simon B Newcomb
  • Fonction : Auteur
Mathieu Salaün
Lynette Keeney
  • Fonction : Auteur
Aileen O'Mahony
  • Fonction : Auteur

Résumé

We describe the formation of RuO 2 thin films grown using atomic layer deposition (ALD) on (100) Si substrates from Ru(EtCp) 2 and O 2 , and the subsequent influence of annealing temperature and atmosphere on the surface morphology and structure of the deposited layers. The films are characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM), and electron diffraction (ED). The as-deposited films consist of RuO 2 islands. No significant changes in composition or morphology are observed following annealing in N 2 for 4 h at either 500 or 7008C. Higher temperature annealing in N 2 (8208C, 4 h) results in some modifications to the morphology and structure where ED data indicate the formation of some Ru metal. However, complete transformation from as-deposited RuO 2 to Ru metal is, obtained after annealing in forming gas (95% N 2 /5% H 2) at 4208C for 5 min.

Dates et versions

hal-02569377 , version 1 (15-05-2020)

Identifiants

Citer

Amelie Salaun, Simon B Newcomb, Ian Povey, Mathieu Salaün, Lynette Keeney, et al.. Nucleation and Chemical Transformation of RuO 2 Films Grown on (100) Si Substrates by Atomic Layer Deposition. Chemical Vapor Deposition, 2011, 17 (4-6), pp.114-122. ⟨10.1002/cvde.201006882⟩. ⟨hal-02569377⟩
19 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More