Ge doped GaN and Al 0.5 Ga 0.5 N-based tunnel junctions on top of visible and UV light emitting diodes

V. Fan Arcara , B. Damilano (1) , G. Feuillet (2) , S. Vezian (1) , K. Ayadi , S. Chenot (1) , J.-Y. Duboz

1 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

The use of tunnel junctions (TJs) is a potential solution in blue LEDs to poor p-contacts, replacing it by another n-contact. TJs are even more advantageous for UV emitting structures, which suffer from the considerably low injection efficiency in high Al concentration UV LEDs. In this work we report our work on Ge n-doped GaN and AlGaN TJs grown on top of blue and UV LEDs, respectively, by a hybrid growth. We have achieved state of the art mobility (67cm 2 /V.s) and resistivity (1.7x10-4 Ω.cm) at a free electron concentration of 5.5x10 20 cm-3 in Ge-doped GaN. With an emission wavelength of 436nm, the GaN TJ slightly increased the optical power of the blue LED. The AlGaN TJs, on the other hand, improved the optical power of the UV LED (304nm) by at least a factor of 3, suggesting the enhancement of the hole injection efficiency by the use of TJs in UV emitting structures.

Domaines: Physique [physics]

V. Fan Arcara, B. Damilano, G. Feuillet, S. Vezian, K. Ayadi, et al.. Ge doped GaN and Al 0.5 Ga 0.5 N-based tunnel junctions on top of visible and UV light emitting diodes. Journal of Applied Physics, 2019, 126 (22), pp.224503. ⟨10.1063/1.5121379⟩. ⟨hal-02569339⟩