In situ measurement of AlAs and GaAs refractive index dispersion at epitaxial growth temperature

Véronique Bardinal (1) , R. Legros (1) , Chantal Fontaine (1)

1 LAAS-PHOTO - Équipe Photonique

In situ molecular beam epitaxy control of III-V optoelectronic device growth has been achieved by dynamic optical reflectometry with tunable excitation wavelength, through the use of a titanium:sapphire laser light source. This new multi-wavelength reflectometry method was used to determine the values of the AlAs and GaAs refractive indices at growth temperature (600 °C). Index dispersion between 760 and 960 nm is presented and found to be in good agreement with the existing models.

Domaines: Optique / photonique; Micro et nanotechnologies/Microélectronique; Matériaux; Electronique

Véronique Bardinal, R. Legros, Chantal Fontaine. In situ measurement of AlAs and GaAs refractive index dispersion at epitaxial growth temperature. Applied Physics Letters, 1995, 67 (2), pp.244-246. ⟨10.1063/1.114681⟩. ⟨hal-02565622⟩