InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate

Z. Loghmari (1, 2) , J.-B. Rodriguez (1, 2) , A. Baranov (1, 2) , M. Rio-Calvo (1, 2) , L. Cerutti (1, 2) , A. Meguekam (1, 2) , M. Bahriz (1, 2) , R. Teissier (1, 2) , E. Tournié (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge

We present InAs/AlSb quantum cascade lasers (QCLs) monolithically integrated on an on-axis (001) Si substrate. The lasers emit near 8 μm with threshold current densities of 0.92-0.95 kA/cm 2 at 300 K for 3.6-mm-long devices and operate in pulsed mode up to 410 K. QCLs of the same design grown for comparison on a native InAs substrate demonstrated a threshold current density of 0.75 kA/cm 2 and the same maximum operating temperature. The low threshold current density of the QCLs grown on Si makes them suitable for photonic integrated sensor implementation.

Domaines: Optique / photonique; Micro et nanotechnologies/Microélectronique

Z. Loghmari, J.-B. Rodriguez, A. Baranov, M. Rio-Calvo, L. Cerutti, et al.. InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate. APL Photonics, 2020, 5 (4), pp.041302. ⟨10.1063/5.0002376⟩. ⟨hal-02544106⟩