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Comprehensive Study on Chip-Integrated Germanium Pin Photodetectors for Energy-Efficient Silicon Interconnects

Abstract : Optical interconnects are promising alternatives to copper-based wirings in on-chip communications. Recent advances in integrated group-IV nanophotonics should address a range of challenges related with speed, energy consumption and cost. Monolithically integrated germanium pin photodetectors on silicon-on-insulator (SOI) waveguides are indispensable devices in this buoyant research field. Here, we comprehensively investigate the opto-electrical properties of hetero-structured pin photodetectors. All photodetectors were fabricated on top of 200-mm SOI substrates using industrial-scale semiconductor manufacturing processes. Under a low-bias voltage supply of 1 V, pin photodetectors exhibit dark-currents from 5 nA to 100 nA, dark current densities from 0.404 A/cm 2 to 0.808 A/cm 2 , responsivities in a range of 0.17 A/W to 1.16 A/W, and cutoff frequencies from 7 GHz to 35 GHz, respectively. Such achievements make them promising for use in power-efficient optical links operating at 40 Gbps, with a device energy dissipation of only few fJ per bit. Index Terms-Complementary metal-oxide-semiconductor technology, germanium photodetectors, inter-and intra-chip interconnects, optical communications, silicon nanophotonics.
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Submitted on : Friday, April 10, 2020 - 11:21:13 AM
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Daniel Benedikovic, Léopold Virot, Guy Aubin, Jean Michel Hartmann, Farah Amar, et al.. Comprehensive Study on Chip-Integrated Germanium Pin Photodetectors for Energy-Efficient Silicon Interconnects. IEEE Journal of Quantum Electronics, Institute of Electrical and Electronics Engineers, 2020, JQE Special Virtual Issue Dedicated to the 21st European Conference on Integrated Optics (ECIO), 56 (1), ⟨10.1109/JQE.2019.2954355⟩. ⟨hal-02539609⟩



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