High-speed-performing pin photodetectors with lateral silicon- germanium-silicon heterojunctions for 1.55 µm communications

D. Benedikovic (1) , L. Virot (2) , G Aubin (1) , J.-M Hartmann (2) , F Amar (1) , B Szelag (2) , B Karakus (2) , C Alonso-Ramos (1) , X Le Roux (1) , P Crozat (1) , E Cassan (1) , D Marris-Morini (1) , C Baudot (3) , F Boeuf (3) , J.-M Fédéli (2) , C Kopp (2) , L Vivien (1)

1 C2N - Centre de Nanosciences et de Nanotechnologies [Orsay]
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 STMicroelectronics

We investigate the properties of high-speed waveguide photodetectors with hetero-structured Silicon-Germanium-Silicon junctions monolithically integrated on Silicon-on-Insulator substrates. These devices take advantage of unique integration strategy that combines butt-waveguide-coupling and lateral Silicon-Germanium-Silicon pin junctions. Fabrication is robust and fully compatible with complementary metal-oxide-semiconductor technology. The resulting devices have improved responsivity and bandwidth performances. In particular, a responsivity up to 1.2 A/W and a dark-current as low as 100 nA under 1V reverse bias are experimentally demonstrated with a set of pin photodetectors. Furthermore, fast device opto-electrical responses lead to an excellent on-chip detection capability well-suited for future high-speed link traffics up to 40 Gbps. An errorless operation is achieved for established 10 Gbps and 25 Gbps data rates, providing a power sensitivities of-13.9 dBm and-11.3 dBm with a bit-error-rate of 10-9 .

Mots clés: group-IVnanophotonics; silicon-on-insulator; germanium photodetectors; optical communications

Domaines: Optique / photonique; Micro et nanotechnologies/Microélectronique

D. Benedikovic, L. Virot, G Aubin, J.-M Hartmann, F Amar, et al.. High-speed-performing pin photodetectors with lateral silicon- germanium-silicon heterojunctions for 1.55 µm communications. 2019 European Conference on Integrated Optics, Apr 2019, Ghent, Belgium. ⟨hal-02539537⟩