Role of nanowire length on the performance of a self-driven NIR photodetector based on mono/bi-layer graphene (camphor)/Sinanowire Schottky junction - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Nanotechnology Année : 2020

Role of nanowire length on the performance of a self-driven NIR photodetector based on mono/bi-layer graphene (camphor)/Sinanowire Schottky junction

Résumé

In this article, we have demonstrated a solid carbon source such as camphor as a natural precursor to synthesize a large area mono/bi-layer graphene (MLG) sheet to fabricate a nanowire junction-based near infrared photodetectors (NIRPDs). In order to increase the surface-tovolume ratio, we have developed Si-nanowire arrays (SiNWAs) of varying lengths by etching planar Si. Then, the camphor-based MLG/Si and MLG/SiNWAs Schottky junction photodetectors have been fabricated to achieve an efficient response with self-driven properties in the near infrared (NIR) regime. Due to a balance between light absorption capability and surface recombination centers, devices having SiNWAs obtained by etching for 30 min shows a better photoresponse, sensitivity and detectivity. Fabricated NIRPDs can also be functioned as self-driven devices which are highly responsive and very stable at low optical power signals up to 2 V with a fast rise and decay time of 34/13 ms. A tremendous enhancement has been witnessed from 36 μAW−1 to 22 mAW−1 in the responsivity at 0 V for MLG/30 min SiNWAs than planar MLG/Si PDs indicating an important development of self-driven NIRPDs based on camphor-based MLG for future optoelectronic devices.
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Dates et versions

hal-02515649 , version 1 (23-03-2020)

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Harsh Chaliyawala, Neha Aggarwal, Zeel Purohit, Roma Patel, Govind Gupta, et al.. Role of nanowire length on the performance of a self-driven NIR photodetector based on mono/bi-layer graphene (camphor)/Sinanowire Schottky junction. Nanotechnology, 2020, 31 (2020-05-29), pp.225208. ⟨10.1088/1361-6528/ab767f⟩. ⟨hal-02515649⟩
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