Fast frequency model of overvoltage in adjustable speed drives : SiC technology vs IGBT technology

Bouazza Taghia (1, 2, 3) , Hubert Piquet (2) , David Malec (3) , Jean-Pierre Carayon (1) , Antoine Belinger (4)

1 IRT Saint Exupéry - Institut de Recherche Technologique
2 LAPLACE-GENESYS - Groupe ENergie Electrique et SYStémique
3 LAPLACE-MDCE - Matériaux Diélectriques dans la Conversion d’Energie
4 LAPLACE-MPP - Matériaux et Procédés Plasmas

The use of fast semiconductor components such as IGBT and SiC in Adjustable Speed Drives (ASD) increases power density and provides better controllability. Nevertheless, secondary effects such as overvoltage at the motor terminals appear and can affect the reliability of the Electrical Insulation System (EIS). The overvoltage is due to the propagation and reflection phenomena along the harness. In this paper, we propose a fast frequency model to simulate motor overvoltage. Their maximum level is studied according to the following parameters: inverter dv/dt, harness length and motor impedance.

Mots clés: SiC Inverter; Harness; IGBT Inverter; Overvoltage; More Electric Aircraft; Partial Discharges; SiC Inverter

Domaines: Sciences de l'ingénieur [physics]; Electromagnétisme; Energie électrique; Electronique

Bouazza Taghia, Hubert Piquet, David Malec, Jean-Pierre Carayon, Antoine Belinger. Fast frequency model of overvoltage in adjustable speed drives : SiC technology vs IGBT technology. Symposium on Electromagnetic Phenomena in Nonlinear Circuits, Jun 2018, Arras, France. ⟨hal-02514761⟩