Concentration-control in all-solution processed semiconducting polymer doping and high conductivity performances

Khaoula Ferchichi (1) , Ramzi Bourguiga , Kamal Lmimouni (1, 2) , Sébastien Pecqueur (1, 2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 NCM - IEMN - Nanostructures, nanoComponents & Molecules - IEMN

Simultaneously optimizing performances, processability and fabrication cost of organic electronic materials is the continual source of compromise hindering the development of disruptive applications. In this work, we identified a strategy to achieve record conductivity values of one of the most benchmarked semiconducting polymers by doping with an entirely solution-processed, water-free and cost-effective technique. High electrical conductivity for poly(3-hexylthiophene) up to 21 S/cm has been achieved, using a commercially available electron acceptor as both a Lewis acid and an oxidizing agent. While we managed water-free solution-processing a three-time higher conductivity for P3HT with a very affordable/available chemical, near-field microscopy reveals the existence of concentration-dependent higher-conductivity micro-domains for which furthermore process optimization might access to even higher performances. In the perpetual quest of reaching higher performances for organic electronics, this work shall greatly unlock applications maturation requiring higher-scale processability and lower fabrication costs concomitant of higher performances and new functionalities, in the current context where understanding the doping mechanism of such class of materials remains of the greatest interest.

Mots clés: p-doping; P3HT; organic electronics; solution processing; semiconducting polymer

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Khaoula Ferchichi, Ramzi Bourguiga, Kamal Lmimouni, Sébastien Pecqueur. Concentration-control in all-solution processed semiconducting polymer doping and high conductivity performances. Synthetic Metals, 2020, 262, pp.116352. ⟨10.1016/j.synthmet.2020.116352⟩. ⟨hal-02509617⟩