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Journal articles
Giant Electroresistance of Super-tetragonal BiFeO3-Based Ferroelectric Tunnel Junctions
Hiroyuki Yamada
1
Vincent Garcia
1
Stéphane Fusil
1
Sören Boyn
1
Maya Marinova
2
Alexandre Gloter
2
Stéphane Xavier
3
Julie Grollier
1
Eric Jacquet
1
Cécile Carrétéro
1
Cyrile Deranlot
1
Manuel Bibes
1
Agnès Barthélémy
1
Hiroyuki Yamada 1
Author
Vincent Garcia 1
Author IdHAL : vincent-garcia ResearcherId : http://www.researcherid.com/rid/C-9359-2012 ORCID : https://orcid.org/0000-0002-7230-8130
Stéphane Fusil 1
Author
Sören Boyn 1
Author
Maya Marinova 2
Author
Alexandre Gloter 2
Author IdHAL : alexandre-gloter ORCID : https://orcid.org/0000-0002-4813-3799 ResearcherId : http://www.researcherid.com/rid/ABE-2539-2020
Stéphane Xavier 3
Author
Julie Grollier 1
Author IdHAL : julie-grollier ORCID : https://orcid.org/0000-0003-4866-4490
Eric Jacquet 1
Author
Cécile Carrétéro 1
Author
Cyrile Deranlot 1
Author
Manuel Bibes 1
Author IdHAL : manuelbibes arXiv : https://arxiv.org/a/manuel.bibes ORCID : https://orcid.org/0000-0002-6704-3422
Agnès Barthélémy 1
Author
1
UMPhy CNRS/THALES - Unité mixte de physique CNRS/Thales ( 1 avenue Augustin Fresnel, 91767 Palaiseau Cedex, France - France)
- THALES (France)
- CNRS - Centre National de la Recherche Scientifique : UMR137 (France)
2
LPS - Laboratoire de Physique des Solides (Bat. 510 91405 Orsay cedex - France)
- UP11 - Université Paris-Sud - Paris 11 (Bâtiment 300 - 91405 Orsay cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8502 (France)
3
Thales Research and Technology [Palaiseau] (1 Avenue Augustin Fresnel, 91767 Palaiseau cedex - France)
- THALES (France)
Abstract : Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio (“T-phase”). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10 000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.
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Journal articles
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https://hal.univ-lille.fr/hal-02509417
Contributor : Lilloa Université de Lille <>
Submitted on : Monday, March 16, 2020 - 5:23:56 PM
Last modification on : Wednesday, December 9, 2020 - 2:02:02 PM
Contributor : Lilloa Université de Lille <>
Submitted on : Monday, March 16, 2020 - 5:23:56 PM
Last modification on : Wednesday, December 9, 2020 - 2:02:02 PM
Identifiers
- HAL Id : hal-02509417, version 1
- DOI : 10.1021/nn401378t
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Citation
Hiroyuki Yamada, Vincent Garcia, Stéphane Fusil, Sören Boyn, Maya Marinova, et al.. Giant Electroresistance of Super-tetragonal BiFeO3-Based Ferroelectric Tunnel Junctions. ACS Nano, 2013, ACS Nano, 7, pp.5385-5390. ⟨10.1021/nn401378t⟩. ⟨hal-02509417⟩
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