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Physical origin of the gate current surge during short-circuit operation of SiC MOSFET

Abstract : During short-circuit of a vertical 4H-SiC power MOSFET, a high gate current starts to flow through the gate dielectric. We demonstrate that the Schottky emission is the main physical mechanisms.
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https://hal.laas.fr/hal-02020275
Contributor : David Trémouilles <>
Submitted on : Wednesday, February 27, 2019 - 10:41:24 AM
Last modification on : Tuesday, May 12, 2020 - 1:28:58 PM
Long-term archiving on: : Tuesday, May 28, 2019 - 12:21:10 PM

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Boige et al. - 2019 - Physical...
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François Boige, David Trémouilles, F. Richardeau. Physical origin of the gate current surge during short-circuit operation of SiC MOSFET. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2019, 40 (5), pp.666-669. ⟨10.1109/led.2019.2896939⟩. ⟨hal-02020275⟩

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