High crystalline quality heteroepitaxial diamond using grid patterned nucleation and growth on Ir, Diam. Relat. Mater, vol.94, p.92, 2019. ,
Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers, Scientific Reports, vol.7, p.44462, 2017. ,
Epitaxy of iridium on SrTiO3/Si (001): A promising scalable substrate for diamond heteroepitaxy, Diam. Rel. Mater, vol.66, p.67, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01848691
Molecular beam epitaxy for high-performance Ga face GaN electron devices, Semicond. Sci. Technol, vol.28, p.74001, 2013. ,
Review-Ionizing Radiation Damage Effects on GaN Devices, ECS Journal of Solid State Science and Technology, vol.5, pp.35-60, 2016. ,
Mechanism of cleaning Si(100) surface using Sr or SrO for the growth of crystalline SrTiO3 films, J. Vac. Sci. Technol. B, vol.20, p.1402, 2002. ,
, Epitaxy of SrTiO3 on Silicon: The Knitting Machine Strategy, vol.28, p.5347, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01848688
Heteroepitaxy of SrTiO3 thin films on Si (001) using different growth strategies: Toward substrate like quality, J. Vac. Sci. Technol. B, vol.29, p.41207, 2011. ,
Surface Termination Conversion during SrTiO3 Thin Film Growth Revealed by X-ray Photoelectron Spectroscopy, Sci. Rep, vol.5, p.11829, 2015. ,
Atomically flat SrOterminated SrTiO3(001) substrate, APL, vol.95, p.141915, 2009. ,
, Heteroepitaxial diamond on iridium: new insights on domain formation, vol.36, p.16, 2013.
URL : https://hal.archives-ouvertes.fr/cea-01846952
Dramatic effect of thermal expansion mismatch on the structural, dielectric, ferroelectric and pyroelectric properties of low-cost epitaxial PZT films on SrTiO3 and Si, Cryst. Eng. Comm, vol.18, p.1887, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01848710
Poisson ratio and bulk lattice constant of (Sr0.25La0.75)CrO3 from strained epitaxial thin films, J. Appl. Phys, vol.126, p.85304, 2019. ,
URL : https://hal.archives-ouvertes.fr/hal-02272738
Heteroepitaxy of diamond on Ir/metal-oxide/ Si substrates in Power Electronics Device Applications of Diamond Semiconductors, p.9780081021835, 2019. ,
Surface investigations on different nucleation pathways for diamond heteroepitaxial growth on iridium, Diam. Relat. Mater, vol.22, p.52, 2012. ,
High quality MPACVD diamond single crystal growth: High microwave power density regime, J. Phys. D, vol.40, p.6175, 2007. ,
, Mosaicity, dislocations and strain in heteroepitaxial diamond grown on iridium, vol.66, p.188, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01489123
Optical spectroscopy for doped diamond Layers in Power Electronics Device Applications of Diamond Semiconductors, p.9780081021835, 2019. ,
Structure, shape, defects and impurities in nanodiamonds investigated by HRTEM and STEM-EELS in Nanodiamonds, J.C. Arnault Ed, 2017. ,
Stress distribution in heteroepitaxial chemical vapor deposited diamond films, J. Appl. Phys, vol.81, p.1726, 1997. ,
Diamond nucleation on iridium buffer layers and subsequent textured growth: A route for the realization of single-crystal diamond films, Appl. Phys. Lett, vol.78, p.192, 2001. ,
, Optical Properties of Diamond, 2001.
Identification of dislocations in synthetic chemically vapor deposited diamond single crystals, Crystal Growth and Design, vol.16, p.2741, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01456077
Multiple role of dislocations in the heteroepitaxial growth of diamond: A brief review, Phys. Status Solidi A, vol.213, p.2028, 2016. ,
Origin of growth defects in CVD diamond epitaxial films, Diam. Relat. Mater, vol.17, pp.60-65, 2008. ,
Zr/oxidized diamond interface for high power Schottky diodes, Appl. Phys. Lett, vol.104, p.52105, 2014. ,
Physics of Semiconductor Devices, 2006. ,
Leakage current analysis of diamond Schottky barrier diode, Appl. Phys. Lett, vol.90, p.73506, 2007. ,
Transmission electron microscopy study of the very early stages of diamond growth on iridium, Diam. Relat. Mater, vol.17, p.1045, 2008. ,
, Effect of bias treatment in the CVD diamond growth on Ir(001), vol.13, p.2081, 2004.
Comparative electron diffraction study of the diamond nucleation layer on Ir(001), Diam. Relat. Mater, vol.17, p.1029, 2008. ,
Comparison of diamond bias enhanced nucleation on Ir and 3C-SiC: A high resolution electron energy loss spectroscopy study, Phys. Status Solidi A, vol.206, p.1972, 2009. ,
Ultralarge elastic deformation of nanoscale diamond, Science, vol.360, p.300, 2018. ,
Raman spectroscopy of diamond, Phil. Trans. R. Soc. Lond. A, vol.362, p.2537, 2004. ,
Assessment of stress relaxation experiments on diamond coatings analyzed by digital image correlation and micro-Raman spectroscopy, Surf. Coat. Technol, vol.237, p.255, 2013. ,
Potential barrier heights at metal on oxygen-terminated diamond interfaces, J. Appl. Phys, vol.118, p.204505, 2015. ,
URL : https://hal.archives-ouvertes.fr/hal-01104188
Free exciton luminescence from a diamond p-i-n diode grown on a substrate produced by heteroepitaxy, Phys. Status Solidi A, vol.211, p.2251, 2014. ,
Electronic properties of diamond Schottky barrier diodes fabricated on silicon-based heteroepitaxially grown diamond substrates, Applied Physics Express, vol.8, p.104103, 2015. ,