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Microstructural and transport properties of Mg doped CuFeO2 thin films: A promising material for high accuracy miniaturized temperature sensors based on the Seebeck effect

Abstract : Delafossite type Mg doped CuFeO2 thin films have been deposited on fused silica by radio-frequency magnetron sputtering. As-deposited 300 nm thick films have been obtained and post-annealed between 350 and 750 °C under primary vacuum. The delafossite structure appears for the samples annealed above 550 °C. The microstructural analysis showed the presence of cracks and an inhomogeneous distribution of the dopant in the thickness. Only the sample annealed at 700 °C showed CuFeO2 stable phases, lower impurities amount, a high and constant Seebeck coefficient (+416 ±3 μV K−1) and good electrical conductivity (1.08 S cm−1 at 25 °C). High accuracy temperature sensors based on the Seebeck effect not only need high Seebeck coefficient without any drift with the temperature, but also a sufficient electrical conductivity and high phase stability. Thanks to its properties and also its low thermal conductivity (4.8 ±0.6 W m−1K−1 at 25 °C) due to the thin film configuration and the polaronic transport, the Mg doped CuFeO2 thin film annealed at 700 °C was found to be a very good p-type material for high accuracy miniaturized temperature measurement sensors based on the Seebeck effect in the medium temperature range.
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https://hal.umontpellier.fr/hal-02498344
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Submitted on : Wednesday, March 11, 2020 - 12:06:33 PM
Last modification on : Tuesday, February 9, 2021 - 11:24:48 AM
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Inthuga Sinnarasa, Yohann Thimont, Antoine Barnabé, Mickael Beaudhuin, Adrien Moll, et al.. Microstructural and transport properties of Mg doped CuFeO2 thin films: A promising material for high accuracy miniaturized temperature sensors based on the Seebeck effect. Journal of Alloys and Compounds, Elsevier, 2020, 827, pp.154199. ⟨10.1016/j.jallcom.2020.154199⟩. ⟨hal-02498344⟩

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