A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions

C. Mukherjee , F. Marc (1) , M. Couret , G.G. Fischer , M. Jaoul , D. Céli (2) , K. Aufinger , T. Zimmer (1) , C. Maneux (1)

1 IMS - Laboratoire de l'intégration, du matériau au système
2 ST-CROLLES - STMicroelectronics [Crolles]

Domaines: Micro et nanotechnologies/Microélectronique

C. Mukherjee, F. Marc, M. Couret, G.G. Fischer, M. Jaoul, et al.. A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions. Solid-State Electronics, 2020, 163, pp.107635. ⟨10.1016/j.sse.2019.107635⟩. ⟨hal-02475429⟩