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Article Dans Une Revue Journal of Applied Physics Année : 2020

The effect of kinetics on intrinsic stress generation and evolution in sputter-deposited films at conditions of high atomic mobility

A. Jamnig
  • Fonction : Auteur
N. Pliatsikas
  • Fonction : Auteur

Résumé

Vapor-based metal film growth at conditions that promote high atomic mobility is typically accompanied by compressive stress formation after completion of island coalescence, while an apparent stress relaxation is observed upon deposition interruption. Despite numerous experimental studies confirming these trends, the way by which growth kinetics affect postcoalescence stress magnitude and evolution is not well understood, in particular, for sputter-deposited films. In this work, we study in situ and in real-time stress evolution during sputter-deposition of Ag and Cu films on amorphous carbon. In order to probe different conditions with respect to growth kinetics, we vary the deposition rate F from 0.015 to 1.27nm/s, and the substrate temperature TS from 298 to 413K. We find a general trend toward smaller compressive stress magnitudes with increasing TS for both film/substrate systems. The stress-dependence on F is more complex: (i) for Ag, smaller compressive stress is observed when increasing F; (ii) while for Cu, a nonmonotonic evolution with F is seen, with a compressive stress maximum for F=0.102nm/s. Studies of postdeposition stress evolution show the occurrence of a tensile rise that becomes less pronounced with increasing TS and decreasing F, whereas a faster tensile rise is seen by increasing F and TS . We critically discuss these results in view of ex situ obtained film morphology which show that deposition-parameter-induced changes in film grain size and surface roughness are intimately linked with the stress evolution.

Dates et versions

hal-02474307 , version 1 (11-02-2020)

Identifiants

Citer

A. Jamnig, N. Pliatsikas, K. Sarakinos, G. Abadias. The effect of kinetics on intrinsic stress generation and evolution in sputter-deposited films at conditions of high atomic mobility. Journal of Applied Physics, 2020, 127 (4), pp.045302. ⟨10.1063/1.5130148⟩. ⟨hal-02474307⟩
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