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Conference papers

Advantages of TCAD simulation towards inverstigation of reliability concerns in GaN HEMTs for RF power applications

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https://hal.archives-ouvertes.fr/hal-02462765
Contributor : Arnaud Curutchet <>
Submitted on : Friday, January 31, 2020 - 3:02:56 PM
Last modification on : Saturday, February 1, 2020 - 1:46:35 AM

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  • HAL Id : hal-02462765, version 1

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Kalparupa Mukherjee, Frederic Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat. Advantages of TCAD simulation towards inverstigation of reliability concerns in GaN HEMTs for RF power applications. BEE Week at IEEE IM an MTT-S Day, IEEE student Branch, Nov 2017, Bordeaux, France. ⟨hal-02462765⟩

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