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Conference papers

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

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https://hal.archives-ouvertes.fr/hal-02462694
Contributor : Arnaud Curutchet <>
Submitted on : Friday, January 31, 2020 - 2:40:01 PM
Last modification on : Tuesday, January 19, 2021 - 11:58:39 AM

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  • HAL Id : hal-02462694, version 1

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Kalparupa Mukherjee, Frederic Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat. TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. ESREF 2017, Sep 2017, Bordeaux, France. ⟨hal-02462694⟩

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