Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Dominique Tournier (1, 2) , Phillippe Godignon (3) , Josep Montserrat (4, 3) , Dominique Planson (1, 2) , Christophe Raynaud (1, 2) , Jean-Pierre Chante (1, 2) , F. Sarrus (5) , Christian Bonhomme (6) , J.-F. F de Palma (6)

1 CEGELY - Centre de génie électrique de Lyon
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 CNM - Centro Nacional de Microelectronica [Spain]
4 IMB-CNM - Instituto de Microelectrònica de Barcelona
5 Ferraz-Shawmut
6 Ferraz Shawmut

Critical steps for the fabrication of SiC devices are thermal annealing and metal ohmic contact formation. Metal annealing effect on the electrical characteristics of the current limiter underlines the necessity to control this device fabrication step. Measurements of contact resistivity as a function of temperature demonstrate the stability of the N type Ni/SiC contact in the range of 175 K-450 K as its value remains constant around 40 µΩ.cm 2. Post implantation annealing effect on the sheet resistance (Rsh) shows that a 1700°C/30 min annealing gives better trade off in terms of dopant activation and surface roughness. High power density has been measured up to 600 V. Current thermal stability has been measured for an applied drain to source voltage of 100 V and exhibits high power density capabilities of SiC VJFET as a controlled current limiter. Introduction.

Mots clés: Current limiter; JFET; serial protection device; high voltage; electrical characterization

Domaines: Energie électrique

Dominique Tournier, Phillippe Godignon, Josep Montserrat, Dominique Planson, Christophe Raynaud, et al.. Characterization of a 4H-SiC High Power Density Controlled Current Limiter. Materials Science Forum, 2003, 433-436, pp.871-874. ⟨10.4028/www.scientific.net/MSF.433-436.871⟩. ⟨hal-02458100⟩