Impact of electrical stress and neutron irradiation on reliability of silicon carbide power MOSFET

K. Niskanen (1, 2) , Antoine Touboul (1, 2) , Rosine Coq Germanicus (3) , A. Michez (1, 2) , A. Javanainen (4) , Frédéric Wrobel (1, 2) , J. Boch (1, 2) , V. Pouget (1, 2) , F. Saigné (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 RADIAC - Radiations et composants
3 CRISMAT - Laboratoire de cristallographie et sciences des matériaux
4 JYU - University of Jyväskylä

The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.

Mots clés: Neutrons; Radiation effects; Stress; Logic gates; Silicon carbide; Electric breakdown; MOSFET; Neutron effects; Power MOSFET; Semiconductor device breakdown; Semiconductor device models; Semiconductor device reliability; Silicon compounds; Technology CAD (electronics); Wide band gap semiconductors; Atmospheric neutrons; Silicon carbide (SiC); Single-event burnout (SEB)

Domaines: Electronique

K. Niskanen, Antoine Touboul, Rosine Coq Germanicus, A. Michez, A. Javanainen, et al.. Impact of electrical stress and neutron irradiation on reliability of silicon carbide power MOSFET. IEEE RADECS 2019, Sep 2019, Montpellier, France. pp.1365 - 1373, ⟨10.1109/TNS.2020.2983599⟩. ⟨hal-02446882⟩