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Silicon carbide power MOSFETs under neutron irradiation: Failure In Time demonstration and long term reliability degradation evaluation

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Conference papers
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https://hal.archives-ouvertes.fr/hal-02446823
Contributor : Dauverchain Eric <>
Submitted on : Tuesday, January 21, 2020 - 10:49:57 AM
Last modification on : Thursday, January 23, 2020 - 4:28:09 PM

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  • HAL Id : hal-02446823, version 1

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K. Niskanen, Antoine Touboul, R. Coq Germanicus, A. Michez, Frédéric Wrobel, et al.. Silicon carbide power MOSFETs under neutron irradiation: Failure In Time demonstration and long term reliability degradation evaluation. 55th IEEE Nuclear Space and Radiation Effects Conference, Jul 2019, San Antonio, United States. ⟨hal-02446823⟩

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