The influence of post-annealing treatment on the electrical properties of In2O3 thin films prepared by an ultrasonic spray CVD process - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Surface and Coatings Technology Année : 2004

The influence of post-annealing treatment on the electrical properties of In2O3 thin films prepared by an ultrasonic spray CVD process

Mihaela Girtan

Résumé

Indium oxide thin films were deposited on glass substrates at different temperatures between 623 and 773 K, by an ultrasonic spray chemical vapor deposition process. The aerosol containing the precursors of the films (InCl3·4H2O) was transported to the reaction zone, using N2 as carrier gas. X-ray diffraction studies showed that films are polycrystalline in nature. Typically, films as-deposited have a minimum resistivity of 2.2×10-3 Ω cm and an optical transmission >85%. After deposition these films were subjected to many cycles of heating-cooling in air (between 300-450 K and 300-673 K). During the first one or two cycles, the maximal heating temperature was approximately 450 K, and for the following was approximately 673 K. The percentage gain in electrical conductivity after the first cycle was calculated and discussed in function of the temperature deposition of films. The activation energies were calculated. © 2003 Elsevier B.V. All rights reserved.

Dates et versions

hal-02443198 , version 1 (17-01-2020)

Identifiants

Citer

Mihaela Girtan. The influence of post-annealing treatment on the electrical properties of In2O3 thin films prepared by an ultrasonic spray CVD process. Surface and Coatings Technology, 2004, 184 (2-3), pp.219-224. ⟨10.1016/j.surfcoat.2003.10.136⟩. ⟨hal-02443198⟩

Collections

UNIV-ANGERS LPHIA
13 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More