Gain Modeling of Strained InGaAsP Based MQW Optical Amplifiers
Résumé
Experimental gain spectra of two strained multiquantum-well (MQW) optical amplifiers are compared to theoretical results obtained from Fermi's golden rule and a four-band k 1 p method. Good agreement is found for both TE and TM modes on each structure. Index Terms-Integrated optoelectronics, quantum-well devices , semiconductor device modeling, semiconductor optical amplifiers , strain.
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