Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions

S. Kuboyama , E. Mizuta , Y. Nakata , H. Shindou , A. Michez (1, 2) , J. Boch (1, 2) , F. Saigné (1, 2) , Antoine Touboul (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 RADIAC - Radiations et composants

Domaines: Electronique

S. Kuboyama, E. Mizuta, Y. Nakata, H. Shindou, A. Michez, et al.. Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions. IEEE RADECS 2018, Sep 2018, Goteborg, Sweden. ⟨hal-02440194⟩