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Effective model for A2g Raman signal in URu2Si2

Abstract : We propose an effective model to describe the $A_{2g}$ signal in Raman scattering experiments in the URu$_{2}$Si$_{2}$ compound. We follow the scheme proposed earlier by Khveshchenko and Wiegmann [Phys. Rev. Lett. 73, 500 (1994)] to calculate the $A_{2g}$ scattering vertex. We extract the imaginary part of a two-point current-current correlation function and compare it directly with the Raman response. We obtain an inelastic peak at $A_{2g}$ channel owing to the interplay between a local staggered ordering and a possible quantum spin liquid behavior. Our results offer an explanation for the electronic Raman scattering experiments at the hidden order phase in URu$_{2}$Si$_{2}$ compound [Phys. Rev. Lett. 113, 266405 (2014)].
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https://hal.archives-ouvertes.fr/hal-02415831
Contributor : Marie-Aude Méasson <>
Submitted on : Tuesday, December 17, 2019 - 12:16:54 PM
Last modification on : Wednesday, May 27, 2020 - 9:56:53 AM

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Carlene Silva de Farias, Marie-Aude Measson, Alvaro Ferraz, Sébastien Burdin. Effective model for A2g Raman signal in URu2Si2. Physical Review B: Condensed Matter and Materials Physics, American Physical Society, 2020, 101 (20), pp.205114. ⟨10.1103/PhysRevB.101.205114⟩. ⟨hal-02415831⟩

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