Performance of the structure AlxGa1-xAs1-yNy/Ge for solar cell applications
Résumé
The aim of this modeling and simulation is to study the influence of the incorporation of nitrogen (N) and aluminum (Al) on the optoelectronic properties of the structure AlxGa1-xAs1-yNy/Ge, and then choose the right combination (N, Al) which gives us a better conversational efficiency of the junction(AlxGa1-xAs1-yNy/Ge), in this study, we simulated the effect of N and Al on the strain, the band gap, carrier mobility and structure efficiency where we based on theoretical models experimentally validate, It has been shown that the Al concentration slightly affects the stress and the band gap, but it has a significant influence on the incorporation of nitrogen and in a more homogeneous way introducing a dramatic decrease in the band gap what change considerably the absorption, carrier mobility and final yield of the structure