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Article Dans Une Revue Romanian Journal of Information Science and Technology Année : 2019

Analytical modelling of a lateral dual gate MESFET for integrated circuit in SiC

Résumé

This paper presents a static analytical model derived from a lateral dual gate MESFET in SiC for which the gates have the particularity to be of different physical nature: the first gate is a Schottky barrier and the second gate is a bipolar junction. In order to build a design-kit dedicated to simulation, a spice model has been developed that includes an analytical model of the MESFET which takes into account especially the influence of the both gates on the channel conductivity. The model provides results with a good agreement with experimental measurements and continuous optimization processes allow having a better matching.

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Dates et versions

hal-02405784 , version 1 (28-12-2020)

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  • HAL Id : hal-02405784 , version 1

Citer

Jean-François Mogniotte, Christophe Raynaud, Mihai Lazar, Loïc Michel. Analytical modelling of a lateral dual gate MESFET for integrated circuit in SiC. Romanian Journal of Information Science and Technology, 2019, 22 (2), pp.103-110. ⟨hal-02405784⟩
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