Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance

T. Francois (1) , J. Coignus (1) , L. Grenouillet (1) , J.P. P Barnes (1) , N. Vaxelaire (1) , J. Ferrand (2) , I. Bottala-Gambetta (2) , M. Gros-Jean (2) , S. Jeannot (2) , P. Boivin (2) , P. Chiquet (3) , Marc Bocquet (3) , E. Nowak (1) , F Gaillard (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 ST-CROLLES - STMicroelectronics [Crolles]
3 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

A clear comparison between Atomic Layer Deposition and Ion Implantation Si doping techniques is established. Comparable remnant polarization and coercive fields are obtained at lower Si content (%Si) for Ion Implantation, with a slight decrease of endurance performance. Switching signal engineering demonstrates a wide range of performance achievable with HfO2:Si ferroelectric layer.

Mots clés: component; memory; FeRAM; HfO2; endurance

Domaines: Micro et nanotechnologies/Microélectronique

T. Francois, J. Coignus, L. Grenouillet, J.P. P Barnes, N. Vaxelaire, et al.. Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance. 2019 IEEE 11th International Memory Workshop (IMW), May 2019, Monterey, United States. pp.1-4, ⟨10.1109/IMW.2019.8739664⟩. ⟨hal-02399691⟩