Skip to Main content Skip to Navigation
Journal articles

Retrapping of carrier emission in photoluminescence decay time in InAlAs quantum dots with different thickness

A. Ben Daly 1 Frédéric Bernardot 2 T. Barisien 2 A. Lemaitre 3 M.A. Maaref 4 C. Testelin 4, 5 
1 Université de Carthage - University of Carthage
2 INSP - Institut des Nanosciences de Paris
3 LPN - Laboratoire de photonique et de nanostructures
4 INSP - Institut des Nanosciences de Paris
5 INSP-E12 - Photonique et cohérence de spin
INSP - Institut des Nanosciences de Paris
Document type :
Journal articles
Complete list of metadata
https://hal.archives-ouvertes.fr/hal-02390107
Contributor : Christophe Testelin Connect in order to contact the contributor
Submitted on : Monday, December 2, 2019 - 6:33:25 PM
Last modification on : Friday, January 14, 2022 - 9:38:05 AM

Identifiers

Collections

CNRS | INSP | ALLINSP | INSP-E12 | SORBONNE-UNIVERSITE | SU-SCIENCES

Citation

A. Ben Daly, Frédéric Bernardot, T. Barisien, A. Lemaitre, M.A. Maaref, et al.. Retrapping of carrier emission in photoluminescence decay time in InAlAs quantum dots with different thickness. Optical Materials, Elsevier, 2018, 78, pp.126-131. ⟨10.1016/j.optmat.2018.01.051⟩. ⟨hal-02390107⟩

Export

BibTeX TEI DC DCterms EndNote Datacite

Share

Metrics

Record views

21