Neutral, charged excitons and biexcitons in strain-free and asymmetric GaAs quantum dots fabricated by local droplet etching

Z. Trabelsi; M. yahyaoui; S. Ben Radhia; K. Boujdaria; E. Zallo; O.G. Schmidt; P. Atkinson; M. Chamarro; C. Testelin

doi:10.1016/j.jlumin.2018.01.012

Journal articles

Neutral, charged excitons and biexcitons in strain-free and asymmetric GaAs quantum dots fabricated by local droplet etching

Z. Trabelsi M. yahyaoui ¹ S. Ben Radhia K. Boujdaria ² E. Zallo O.G. Schmidt ³ P. Atkinson M. Chamarro ⁴ C. Testelin ^{4, 5}

1 ICARE - Institut de Combustion, Aérothermique, Réactivité et Environnement

2 Université de Carthage - University of Carthage

3 Max-Planck-Institut für Festkörperforschung

4 INSP - Institut des Nanosciences de Paris

5 INSP-E12 - Photonique et cohérence de spin

INSP - Institut des Nanosciences de Paris

Document type :

Journal articles

Domain :

Physics [physics]

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https://hal.archives-ouvertes.fr/hal-02390097
Contributor : Christophe Testelin Connect in order to contact the contributor
Submitted on : Monday, December 2, 2019 - 6:29:10 PM
Last modification on : Friday, January 14, 2022 - 9:38:04 AM

Neutral, charged excitons and biexcitons in strain-free and asymmetric GaAs quantum dots fabricated by local droplet etching

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Neutral, charged excitons and biexcitons in strain-free and asymmetric GaAs quantum dots fabricated by local droplet etching

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