Tunneling anisotropic magnetoresistance in fully epitaxial magnetic tunnel junctions with different barriers

B S Tao (1, 2, 3) , L N Jiang (2) , W J Kong (2) , W Z Chen (2) , Bin Yang (2) , X. Wang (2) , C. Wan (2) , H. Wei (2) , M. Hehn (3) , D. Lacour (3) , Y Lu (3) , X F Han (2)

1 Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
2 UCAS - University of Chinese Academy of Sciences [Beijing]
3 IJL - Institut Jean Lamour

Domaines: Science des matériaux [cond-mat.mtrl-sci]

B S Tao, L N Jiang, W J Kong, W Z Chen, Bin Yang, et al.. Tunneling anisotropic magnetoresistance in fully epitaxial magnetic tunnel junctions with different barriers. Applied Physics Letters, 2018, 112 (24), ⟨10.1063/1.5027909⟩. ⟨hal-02388308⟩