Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

Martina Morassi (1) , Ludovic Largeau (1) , Fabrice Oehler (2) , Hyun-Gyu Song (3) , Laurent Travers (2) , François Julien (1) , Jean-Christophe Harmand (4) , Yong-Hoon Cho (5) , Frank Glas (6) , Maria Tchernycheva (1) , Noelle Gogneau (1)

1 C2N (UMR_9001) - Centre de Nanosciences et Nanotechnologies
2 C2N - Centre de Nanosciences et de Nanotechnologies [Marcoussis]
3 KAIST - Korea Advanced Institute of Science and Technology
4 LBE - Laboratoire de Biotechnologie de l'Environnement [Narbonne]
5 Department of Physics and Graduate School of Nanoscience and Technology
6 LPN - Laboratoire de photonique et de nanostructures

Domaines: Sciences de l'ingénieur [physics]; Matériaux

Martina Morassi, Ludovic Largeau, Fabrice Oehler, Hyun-Gyu Song, Laurent Travers, et al.. Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy. Crystal Growth & Design, 2018, 18 (4), pp.2545-2554. ⟨10.1021/acs.cgd.8b00150⟩. ⟨hal-02385645⟩