Low frequency noise characterization and modeling of SiGe HBT featuring LASER annealing in a 55-nm CMOS node

J. Elbeyrouthy (1, 2) , A. Vauthelin (1, 2) , Bruno Sagnes (1, 2) , F. Pascal (1, 2) , Alain Hoffmann (1, 2) , M. Valenza (1, 2) , Sebastien Haendler (3) , Alexis Gauthier (3) , Pascal Chevalier (3) , Daniel Gloria (3)

1 IES - Institut d’Electronique et des Systèmes
2 M@CSEE - Micro électronique, Composants, Systèmes, Efficacité Energétique
3 ST-CROLLES - STMicroelectronics [Crolles]

This work presents Low Frequency Noise (LFNoise) characterization and modeling performed on DPSASEG SiGe HBT integrated in a 55-nm CMOS node. The aim of this study is to evaluate the advantage brought by the implementation of a Dynamic Surface Annealing (DSA) in addition to the well-known Spike Annealing process. The HBTs are supplied by STMicroelectronics Crolles and present transit (fT) and maximum oscillation (fMAX) frequencies in the 320-370 GHz range. Spectra can be affected by the presence of generation-recombination (GR) components. The 1/f noise amplitude is modeled following the SPICE compact model, and the 1/f parameters KF and AF are calculated. The extracted figure of merit KB = KFAe has a very good value of 6.8 10-10 μm² for transistors processed using the DSA technique.

Domaines: Electronique

J. Elbeyrouthy, A. Vauthelin, Bruno Sagnes, F. Pascal, Alain Hoffmann, et al.. Low frequency noise characterization and modeling of SiGe HBT featuring LASER annealing in a 55-nm CMOS node. 25th International Conference on Noise and Fluctuations (ICNF 2019), Jun 2019, Neuchâtel, Switzerland. ⟨10.5075/epfl-ICLAB-ICNF-269248⟩. ⟨hal-02381453⟩