Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique

Guillaume Alombert-Goget (1) , Yannick Guyot (1) , Abdeldjelil Nehari (1) , Omar Benamara (1) , Nicholas Blanchard (1) , Alain Brenier (1) , Nicolas Barthalay (2) , Kheirreddine Lebbou (1)

1 ILM - Institut Lumière Matière [Villeurbanne]
2 RSA RUBIS DSA

The Kyropoulos technique allows growing large diameter Ti doped sapphire for Chirped pulse amplification laser. A scattering defect peculiar to Kyropoulos grown crystals is presented. This defect is characterized by different techniques: luminescence, absorption measurement, X-ray rocking curve. The impact of this defect to the potential application in chirped pulse amplification CPA laser is evaluated. The nature of this defect is discussed. Modified convexity of the interface is proposed to avoid the formation of this defect and increase the quality of the Ti sapphire crystal.

Mots clés: defects; Kyropoulos method; laser emission; Ti-doped sapphire

Domaines: Matériaux

Guillaume Alombert-Goget, Yannick Guyot, Abdeldjelil Nehari, Omar Benamara, Nicholas Blanchard, et al.. Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique. CrystEngComm, 2018, 20 (4), pp.412-419. ⟨10.1039/C7CE02004J⟩. ⟨hal-02380281⟩