Effects of Total Ionizing Dose on I-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors

J. Elbeyrouthy (1, 2) , A. Vauthelin (1, 2) , M. Seif (1, 2) , Bruno Sagnes (1, 2) , F. Pascal (1, 2) , Alain Hoffmann (1, 2) , M. Valenza (1, 2) , J. Boch (1, 3) , Tadec Maraine (1, 3) , Sebastien Haendler (4) , Alexis Gauthier (4) , Pascal Chevalier (4) , Daniel Gloria (4)

1 IES - Institut d’Electronique et des Systèmes
2 M@CSEE - Micro électronique, Composants, Systèmes, Efficacité Energétique
3 RADIAC - Radiations et composants
4 ST-CROLLES - STMicroelectronics [Crolles]

Domaines: Sciences de l'ingénieur [physics]; Micro et nanotechnologies/Microélectronique

J. Elbeyrouthy, A. Vauthelin, M. Seif, Bruno Sagnes, F. Pascal, et al.. Effects of Total Ionizing Dose on I-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors. RADECS 2019, 30th European Conference on Radiation and its Effects on Components and Systems, Sep 2019, Montpellier, France. ⟨hal-02380234⟩