Insights in the atomic arrangement of stacking faults in AgSbTe2 based thermoelectric materials - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

Insights in the atomic arrangement of stacking faults in AgSbTe2 based thermoelectric materials

Fichier non déposé

Dates et versions

hal-02379745 , version 1 (25-11-2019)

Identifiants

  • HAL Id : hal-02379745 , version 1

Citer

Lamya Abdellaoui, S. Zhang, S. Zaefferer, R. Bueno-Villoro, B. Gault, et al.. Insights in the atomic arrangement of stacking faults in AgSbTe2 based thermoelectric materials. The 38th International Conference on Thermoelectrics (ICT), Jun 2019, Gyeongju, South Korea. ⟨hal-02379745⟩
28 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More