2D-Graphene Epitaxy on SiC for RF Application: Fabrication, Electrical Characterization and Noise Performance

Dalal Fadil (1) , Wei Wei (1) , Marina Deng (2) , Sebastien Fregonese (2) , Wlodek Stuprinski (3) , Emiliano Pallecchi (1, 4) , Henri Happy (1, 4)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 IMS - Laboratoire de l'intégration, du matériau au système
3 Warsaw University of Technology [Warsaw]
4 CARBON - IEMN - Carbon - IEMN

Domaines: Micro et nanotechnologies/Microélectronique

Dalal Fadil, Wei Wei, Marina Deng, Sebastien Fregonese, Wlodek Stuprinski, et al.. 2D-Graphene Epitaxy on SiC for RF Application: Fabrication, Electrical Characterization and Noise Performance. 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018, Jun 2018, Philadelphia, United States. pp.228-231, ⟨10.1109/MWSYM.2018.8439655⟩. ⟨hal-02372682⟩