High performance of 3D silicon nanowires array@CrN for electrochemical capacitors

Abdelouadoud Guerra (1, 2) , Emile Haye (3) , Amine Achour (3) , Maxime Harnois (4) , Toufik Hadjersi (5) , Jean-Francois Colomer (3) , Jean-Jacques Pireaux (3) , Stéphane Lucas (3) , Rabah Boukherroub (1, 6)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 UFAS1 - Université Ferhat-Abbas Sétif 1 [Sétif]
3 UNamur - Université de Namur [Namur]
4 IETR - Institut d'Électronique et des Technologies du numéRique
5 CRTSE - Research Center for Semiconductor Technology for Energy
6 NBI - IEMN - NanoBioInterfaces - IEMN

Silicon nanowire (SiNW) arrays were coated with chromium nitride (CrN) for use as supercapacitor electrodes. The CrN layer of different thicknesses was deposited onto SiNWs using bipolar magnetron sputtering method. The areal capacitance of the SiNWs-CrN, as measured in 0.5 M HSO electrolyte, was as high as 180 mF cm at a scan rate of 5 mV s (equivalent to 31.8 mF cm at 1.6 mA cm) with an excellent electrochemical retention of 92% over 15 000 cycles. This work paves the way toward using CrN modified 3D SiNWs arrays for micro-supercapacitor application.

Domaines: Chimie; Matériaux

Abdelouadoud Guerra, Emile Haye, Amine Achour, Maxime Harnois, Toufik Hadjersi, et al.. High performance of 3D silicon nanowires array@CrN for electrochemical capacitors. Nanotechnology, 2020, 31 (3), pp.035407. ⟨10.1088/1361-6528/ab4963⟩. ⟨hal-02367944⟩