Ge-rich SiGe waveguides for supercontinuum generation in the mid-IR

Joan Manel Ramirez , Samuel Serna (1) , Vladyslav Vakarin (1) , Qiankun Liu (1) , Jacopo Frigerio (2) , Andrea Ballabio (3) , Xavier Le Roux , Laurent Vivien (1) , Eric Cassan (1) , Giovanni Isella (2) , Nicolas Dubreuil (4) , Delphine Marris-Morini (1)

1 C2N - Centre de Nanosciences et de Nanotechnologies [Orsay]
2 Politecn Milan, LNESS Dipartimento Fis, I-22100 Como, Italy
3 POLIMI - Politecnico di Milano [Milan]
4 Laboratoire Charles Fabry / Manolia

The third-order nonlinear parameter of Ge-rich SiGe waveguides are experimentally retrieved using a bi-directional top hat D-scan at λ = 1.58 µm. The obtained values are then used to fit the theoretical equation, providing promising values in the mid-IR, where the nonlinear effects are no longer limited by two-photon absorption. New Ge-rich SiGe waveguide designs are provided to exploit the nonlinear properties in the mid-IR, showing a flat anomalous dispersion over one octave spanning from λ = 3 µm to λ = 8 µm and a γ parameter that decreases from γ = 10 W-1 m-1 .

Domaines: Optique [physics.optics]

Joan Manel Ramirez, Samuel Serna, Vladyslav Vakarin, Qiankun Liu, Jacopo Frigerio, et al.. Ge-rich SiGe waveguides for supercontinuum generation in the mid-IR. Silicon Photonics: from Fundamental Research to Manufacturing, SPIE proceedings, 10686, pp.106860P, 2018, Proceedings of SPIE, ⟨10.1117/12.2306873⟩. ⟨hal-02362461⟩