Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

Riad Kabouche (1, 2) , Idriss Abid (1) , Malek Zegaoui (1) , Kai Cheng , F Medjdoub (1, 2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 WIND - IEMN - WIde baNd gap materials and Devices - IEMN

We report on the first demonstration of low trapping effects up to 3000 V within GaN-on-silicon epitaxial layers using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. The fabricated AlGaN/GaN devices deliver low specific on-resistance below 10 mΩcm 2 together with unprecedented 3-terminal blocking voltage while substrate ramp measurements show reduced hysteresis up to 3000 V. These results pave the way for beyond 1200 V applications using large wafer diameter GaN-on-Si high electron mobility transistors.

Mots clés: GaN power devices; trapping; high voltage

Domaines: Micro et nanotechnologies/Microélectronique

Riad Kabouche, Idriss Abid, Malek Zegaoui, Kai Cheng, F Medjdoub. Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects. International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Apr 2019, Minneapolis, United States. ⟨hal-02356891⟩