The 2018 GaN power electronics roadmap, J. Phys. D. Appl. Phys, vol.51, issue.16, p.163001, 2018. ,
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs, IEEE Trans. Electron Devices, vol.64, issue.9, 2017. ,
Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates, IEEE Trans. Electron Devices, vol.65, issue.5, pp.1721-1727, 2018. ,
Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si structures, 24th Int. Symp. Power Semicond. Devices ICs, vol.33, pp.245-248, 2012. ,
Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs, Tech. Dig. -Int. Electron Devices Meet. IEDM, 2015. ,