H. Amano, The 2018 GaN power electronics roadmap, J. Phys. D. Appl. Phys, vol.51, issue.16, p.163001, 2018.

M. Borga, M. Meneghini, I. Rossetto, S. Stoffels, N. Posthuma et al., Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs, IEEE Trans. Electron Devices, vol.64, issue.9, 2017.

X. Li, M. Van-hove, M. Zhao, B. Bakeroot, S. You et al., Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates, IEEE Trans. Electron Devices, vol.65, issue.5, pp.1721-1727, 2018.

C. Zhou, Q. Jiang, S. Huang, and K. J. Chen, Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si structures, 24th Int. Symp. Power Semicond. Devices ICs, vol.33, pp.245-248, 2012.

P. Moens, A. Banerjee, M. J. Uren, M. Meneghini, S. Karboyan et al., Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs, Tech. Dig. -Int. Electron Devices Meet. IEDM, 2015.