Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate

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https://hal.archives-ouvertes.fr/hal-02356757
Contributor : Farid Medjdoub <>
Submitted on : Friday, November 8, 2019 - 11:28:08 PM
Last modification on : Saturday, November 9, 2019 - 1:54:45 AM

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Mohamed Bouslama, Ahmad Al Hajjar, Raphaël Sommet, Farid Medjdoub, Jean-Christophe Nallatamby. Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate. 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Sep 2018, Madrid, France. pp.333-336, ⟨10.23919/EuMIC.2018.8539941⟩. ⟨hal-02356757⟩

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