C-doped AlN/GaN HEMTs for High efficiency mmW applications

Romain Pécheux (1, 2) , Riad Kabouche (1) , Etienne Okada (1, 3) , Malek Zegaoui (1) , F Medjdoub (1, 4)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 Thalès Optronique
3 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
4 WIND - IEMN - WIde baNd gap materials and Devices - IEMN

We report on high power-added-efficiency using AlN/GaN heterostructure with a carbon doped buffer layer for millimeter wave applications (C-doped HEMTs). The carbon doped HEMTs show high electrical characteristics with a maximum drain current density Id of 1.5 A/mm, an extrinsic transconductance Gm of 500 mS/mm and a maximum oscillation frequency fmax above 200 GHz while using a gate length of 120 nm. The high RF performance obtained on the carbon doped HEMT combined to an excellent electron confinement under high bias enabled to achieve a state-of-theart combination at 40 GHz of output power density (POUT = 7 W/mm) and power added efficiency (PAE) above 50% up to VDS = 25V in pulsed mode.

Mots clés: high electron mobility transistors (HEMTs); GaN; Carbon doped; output power density and power added efficiency (PAE)

Domaines: Micro et nanotechnologies/Microélectronique

Romain Pécheux, Riad Kabouche, Etienne Okada, Malek Zegaoui, F Medjdoub. C-doped AlN/GaN HEMTs for High efficiency mmW applications. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2018), Jul 2018, Brive La Gaillarde, France. pp.1-3, ⟨10.1109/INMMIC.2018.8430021⟩. ⟨hal-02356756⟩