Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications

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https://hal.archives-ouvertes.fr/hal-02356753
Contributor : Farid Medjdoub <>
Submitted on : Friday, November 8, 2019 - 11:25:01 PM
Last modification on : Saturday, November 9, 2019 - 1:54:44 AM

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R. Kabouche, J. Derluyn, R. Pusche, S. Degroote, M. Germain, et al.. Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications. 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Sep 2018, Madrid, France. pp.5-8, ⟨10.23919/EuMIC.2018.8539962⟩. ⟨hal-02356753⟩

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